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| Ordering number : ENA0509A EC3A04B SANYO Semiconductors DATA SHEET N-Channel Junction Silicon FET EC3A04B Applicatins * Low-Frequency General-Purpose Amplifier, Impedance Converter Applications Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. Features * * * * Small IGSS. Small Ciss. Ultraminiature package facilitates miniaturization in end products. Halogen free compliance (UL94HB). Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDSX VGDS IG ID PD Tj Tstg Conditions Ratings 30 --30 10 10 100 150 --55 to +150 Unit V V mA mA mW C C Electrical Characteristics at Ta=25C Parameter Gate-to-Drain Breakdown Voltage Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)GDS IGSS VGS(off) Conditions IG=-10A, VDS=0V VGS=-20V, VDS=0V VDS=10V, ID=1A --0.18 --0.65 Ratings min --30 --1.0 --2.2 typ max Unit V nA V Marking : KC Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 41608 TI IM TC-00001316 / 70407GB TI IM TC-00000742 No. A0509-1/4 EC3A04B Continued from preceding page. Parameter Drain Current Forward Transfer Admittance Input Capacitance Reverse Transfer Capacitance Static Drain-to-Source On-State Resistance Symbol IDSS yfs Ciss Crss RDS(on) Conditions VDS=10V, VGS=0V VDS=10V, VGS=0V, f=1kHz VDS=10V, VGS=0V, f=1MHz VDS=10V, VGS=0V, f=1MHz VDS=10mV, VGS=0V Ratings min 0.6* 3.0 5.0 4 1.1 200 typ max 3.0* Unit mA mS pF pF * : The EC3A04B is classified by IDSS as follows : (unit : mA). Rank 2 3 IDSS 0.6 to 1.5 1.2 to 3.0 Package Dimensions unit : mm (typ) 7039-004 Top View 3 Polarity Discriminating Mark 2 1 0.6 0.05 0.5 0.05 1 0.5 0.25 0.25 0.65 0.05 3 0.15 0.15 0.2 0.35 Bottom View 2 0.05 0.4 1.0 1 : Gate 2 : Source 3 : Drain SANYO : ECSP1006-3B Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) KC Polarity mark (Top) Source Gate Drain Source *Electrodes : Bottom Drain Gate No. A0509-2/4 EC3A04B 3.0 ID -- VDS 3.0 ID -- VDS VGS=0V --0.1V --0.2V --0.3V --0.4V 2.5 2.5 Drain Current, ID -- mA 2.0 VGS=0V --0.1V --0.2V Drain Current, ID -- mA 5 2.0 1.5 1.5 1.0 1.0 --0.3V 0.5 --0.4V 0.5 0 0 1 2 3 4 0 0 5 10 15 20 25 30 IT11451 5 Drain-to-Source Voltage, VDS -- V IT11450 5 ID -- VGS Drain-to-Source Voltage, VDS -- V ID -- VGS VDS=10V VDS=10V 4 4 Drain Current, ID -- mA ID .0 =3 S S mA mA 2 Ta = --2 5 C 3 3 2 2.0 1 1.0 --1.2 --1.0 --0.8 --0.6 --0.4 mA 0 0 IT11452 2 --1.2 --1.0 --0.8 C 75 1 25 --0.6 C --0.2 0 0 ITR00636 --0.2 --0.4 Gate-to-Source Voltage, VGS -- V 2 VGS(off) -- IDSS Gate-to-Source Voltage, VGS -- V yfs -- ID Forward Transfer Admittance, yfs -- mS VDS=10V ID=1.0A VDS=10V f=1kHz A 2.0m 3.0m A 10 7 5 3 2 Cutoff Voltage, VGS(off) -- V --1.0 7 5 1.0 7 5 3 2 0.1 =1.0 I DSS mA 3 2 5 7 1.0 2 3 5 IT11453 2 3 5 7 1.0 2 3 5 IT11454 Drain Current, IDSS -- mA 2 Drain Current, ID -- mA 100n yfs -- IDSS Gate-to-Drain Leak Current, IGDL -- A VDS=10V VGS=0V f=1kHz IGDL -- VDS Forward Transfer Admittance, yfs -- mS 3 10n 3 1n 3 100p 3 10p 3 1p 5 IGDL 10 7 5 G D S ID DC DC 3 2 1.0 5 7 1.0 2 3 5 IT11455 ID=1mA 0 5 10 15 20 25 ITR00640 Drain Current, IDSS -- mA Drain-to-Source Voltage, VDS -- V No. A0509-3/4 Drain Current, ID -- mA EC3A04B 10 Ciss -- VDS VGS=0V f=1MHz Output Capacitance, Crss -- pF 5 Crss -- VDS VGS=0V f=1MHz 7 Input Capacitance, Ciss -- pF 3 5 2 3 2 1.0 7 1.0 5 7 1.0 2 3 5 7 10 2 3 5 5 5 7 1.0 2 3 5 7 10 2 3 5 Drain-to-Source Voltage, VDS -- V 120 IT11456 PD -- Ta Drain-to-Source Voltage, VDS -- V IT11457 Allowable Power Dissipation, PD -- mW 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C ITR00646 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2008. Specifications and information herein are subject to change without notice. PS No. A0509-4/4 |
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